Scientists from the NTI Competence Center “Photonics” at Alferov University have developed a new type of diode based on gallium nitride (GaN) that can be used in a variety of electronic devices, including space electronics. This Schottky barrier diode is made using gallium nitride nano whiskers.
Professor Ivan Mukhin explained that gallium nitride is an interesting semiconductor material that can be used in the creation of next-generation electronic components for power electronics, microwave electronics and optoelectronics. He also noted that Schottky diodes, based on an energy barrier between a metal and a semiconductor, could perform a variety of functions, such as converting alternating current to direct current or generating electromagnetic radiation.
NTI Center “Photonics” scientists have synthesized whisker nanocrystals of gallium nitride and created diodes with excellent properties in the frequency range up to 160 GHz. They stated that the use of silicon substrates for the synthesis of nanocrystals has economic advantages, since silicon is the main material in the semiconductor industry.
This breakthrough in diode development opens up new possibilities for a variety of sensors and IoT devices, as well as next-generation communication components. The results of the research were published in the journal Nanotechnology.
Source: Ferra
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