Researchers from the National University of Nuclear Research MEPhI, together with an international team, have created for the first time a unique material doped with lanthanum, ruthenium and indium – strontium stannate. This new semiconductor perovskite has shown promising properties in the field of optoelectronics, memory devices and spintronics. The scientists noted that the material can be obtained by a simple and economical, environmentally friendly method.
According to Professor Mikhail Maslov of the National Research Nuclear University MEPhI, new data on the structure and properties of the material indicate a narrow semiconducting gap of about 1.5 eV, which is significantly less than unsubstituted strontium stannate. Maslov explained that doping with ruthenium changes the properties of the material, allowing the transition between the dielectric and semimetallic states to be controlled. This creates opportunities for tuning electronic properties depending on the composition of the dopants.
Additionally, LSSIRuO demonstrated higher conductivity and ferromagnetic properties at lower temperatures. The scientists believe that the combination of a narrow semiconducting gap with unique electrical and magnetic properties makes this material an excellent candidate for use in a variety of technologies, including optoelectronics and spintronics.
Source: Ferra
I am a professional journalist and content creator with extensive experience writing for news websites. I currently work as an author at Gadget Onus, where I specialize in covering hot news topics. My written pieces have been published on some of the biggest media outlets around the world, including The Guardian and BBC News.
