As explained by TSU Nikita Yakovlev’s graduate student, Oxit Gaul belongs to the semiconductors of the fourth generation. Such materials are resistant to high stress, efficiency and compact dimensions. Development is based on a voltage of more than 1000 volts.
The project received the support of the fund to help innovations. Now experts are trying to optimize the production process. According to them, new diodes will find use in various areas from energy -saving charger to car control systems.
Although China is now the leader in the development of semiconductors in Gaulic oxide, Russian scientists are actively working in this direction.
Source: Ferra
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