Based on this development, it will be possible to produce high-performance transistors to be used in 5G communication.
According to Sergei Kukushkin, this technology could lead to the creation of the first high-tech pilot production of silicon carbide layers on silicon substrates in Russia. It will enable the development of next-generation microelectronics as well as 5G communication chips and provide the country with a leading position in the production of advanced semiconductor materials.
Source: Ferra
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