It all depends on electron mobility. Electrons, the agile workhorses of chips, move faster in the 110 plane. Although the “holes” (electron vacancies) move slower in this direction, the speed gain of the pFET outweighs the slight slowing of the electrons, resulting in faster data. is generally processed.
Challenges and Potential: Although technically possible, the transition to silicon 110 is fraught with challenges. Growing silicon and germanium layers in this alternative orientation requires significant manufacturing adjustments. Additionally, engineers need to address the weaker properties of nFETs in 110-silicon.
Despite the challenges, it is difficult to ignore potential productivity gains. IBM plans to conduct research aimed at slowing nFET growth and work on 110-silicon for the use of a 3D “complementary FET” (CFET) stack, a promising architecture for future chips. Other leading chip manufacturers have also shown interest in CFETs, suggesting that the transition to silicon could become a dominant trend in the next decade.
If silicon 110 becomes widespread, it could revolutionize chip design and lead to faster, more efficient processors for everything from smartphones to supercomputers.
Source: Ferra
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