SOT-MRAM, a type of non-volatile memory, has the potential to revolutionize the computer industry by providing a more energy-efficient and faster alternative to current memory technologies. Compared to SRAM, which is typically used for caches and internal memory applications, SOT-MRAM has higher density and does not consume power when not in use; This makes it ideal for data centers and battery-powered applications. Additionally, SOT-MRAM exhibits latencies comparable to DRAM and is significantly faster than 3D NAND Flash.
General Director of ITRI Electronics and Optoelectronics Research Laboratory, Dr. “This cell achieves speeds of 10 ns, simultaneously achieving low power consumption and high speed performance,” said Shih-Chieh Chang. Overall computing performance can be further enhanced when memory circuitry is integrated with computing. In the future, this technology will be used in high-performance computing (HPC), artificial intelligence (AI), automotive chips, etc. It can find application in different fields.
Source: Ferra
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