TSMC will use nanosheets in the 2nm process, which will go into production in 2025. The transition from Finnish field-effect transistors (FinFET) to this technology should contribute to further reducing the power consumption of advanced chips.

Nanolayers are a type of omnidirectional field-effect transistors (GAAFET) in which floating transistor fins are surrounded by a gate. Samsung will be the first to use nanosheets in the 3nm process. But Bernstein analyst Mark Li doubts the technology is ready enough: Nvidia and Qualcomm would choose TSMC because of the risks. Intel also expects a 20A process with RibbonFETs in the first half of 2024, but Li isn’t convinced Team Blue will meet that deadline.

Samsung’s 3GAE (MBCFET) will go into production this year.

The Taiwanese chip manufacturer states that the 3nm process, which is expected to be made this year, will remain up to date for a long time. Given the additional cost of the more advanced 2nm, TSMC CEO Kevin Zhang reports that both manufacturing processes will be offered side-by-side for a long time. Zhang hopes that efficiency-conscious customers will make the first switch to 2 nanometers.

Source: EETimes

Source: Hardware Info

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