Researchers from MIPT and the Beijing Institute of Technology have made significant progress in the field of ferroelectric materials, creating a new method for producing ultrathin films with unique properties. The discovery has the potential to revolutionize the development of next-generation miniature electronic devices.
Ferroelectric materials have a special property – spontaneous polarization, in which electric dipoles are arranged in a certain direction within the boundaries of crystal domains. This polarization can change under the influence of an external electric field and has applications in various devices, including transistors and sensors.
One of the main problems with such materials is that they lose their properties as they shrink in size. As the films get thinner, their spontaneous polarization weakens or disappears, limiting their use. In response to this problem, a research team led by Vasily Stolyarov studied ultrathin films of CuCrSe2 and developed a method to create them via chemical vapor deposition.
A specially designed vacuum chamber provides control over the interaction of selenium gas with copper and chromium elements, making it possible to obtain ultrathin films with high precision in terms of composition, structure and thickness. The resulting CuCrSe2 nanocrystals retain their spontaneous polarization even at high temperatures of up to 800 K, making them promising for use in high-temperature applications.
This breakthrough opens new horizons in creating ferroelectric materials with improved properties that could lead to the development of more efficient and compact electronic devices, including next-generation memory chips, sensors and transistors.
Source: Ferra
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